有人用silvaco模拟器件公司过GaN HEMT器件没有
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时间：2016-10-22 09:00
AlGaN/GaN HEMT器件特性仿真--《电子科技大学》2012年硕士论文
AlGaN/GaN HEMT器件特性仿真
【摘要】：近十几年来,随着半导体技术的快速发展,传统的Si和GaAs等基的器件性能已经接近极限,不能满足半导体的应用需要。由于材料上以及电学属性上的优势,新型的三代半导体宽禁带材料GaN、AlGaN和SiC等基的微波器件能够突破其上限极限,达到常规半导体难以达到的性能指标。由于这个原因,目前三代半导体GaN材料的AlGaN/GaN HEMTs由于其优越的研究前景而成为目前的热点研究对象。
本学位论文主要针对上述的问题,在充分了解了AlGaN/GaN HEMTs器件的发展状况以及其工作原理的基础上,构建了一个简单的AlGaN/GaN HEMTs器件模型,并且对该模型进行了器件的相关电学属性模拟与仿真。主要的工作有以下几方面：
1.作者对HEMT器件性能以及工作原理进行了研究,而且总结很多GaN等材料的电学属性的参数。
2.简要概述了一个半导体器件物理的概论,是各种各样器件特性的基础,介绍了器件的结构与工作原理。在此基础上详细介绍了HEMT器件的特性,主要有其输出特性、转移特性等方面,这些对于HEMT器件应用有着很重要的作用。
3.介绍Silvaco软件的使用方法,详细介绍了模拟中要用到的基本模型如迁移率模型、载流子生成-复合模型、碰撞电离模型和漂移扩散模型等,以及模拟时需要的材料模型如材料的禁带宽度、介电常数、载流子的有效质量、有效状态密度、空间电荷和自热效应等,随后分析了器件中的极化效应的产生原因,如自发极化效应和压电极化效应的产生,在此基础上,介绍了二维电子气的产生原因,分析了二维电子气对器件性能的影响,随后介绍了HEMT器件的基本结构。
4.从多方面分析了影响器件性能的参数,利用Silvaco软件来构建和设计简单的模型,并且对所建立的模型的载流子浓度、转移特性、输出特性等进行了比较详细的仿真以及分析。将得到的仿真结果与实验结果进行了详细的对比分析,并且对结果的偏差做了充分的解释。
【关键词】：
【学位授予单位】：电子科技大学【学位级别】：硕士【学位授予年份】：2012【分类号】：TN305【目录】：
摘要4-5ABSTRACT5-10第一章 绪论10-15 1.1 AlGaN/GaN HEMT器件的研究背景及其历史10-13
1.1.1 GaN材料的发展10-11
1.1.2 国内外研究动态11-13 1.2 本文主要研究内容13-14 1.3 本章小结14-15第二章 基本理论15-32 2.1 半导体模拟的物理基础15-23
2.1.1 半导体的形态15-17
2.1.2 载流子迁移率17
2.1.3 输运方程17-18
2.1.4 载流子的复合和产生18-20
2.1.5 泊松方程20-21
2.1.6 半导体器件的基本方程21
2.1.7 非平衡载流子浓度21-23 2.2 HEMT器件的工作原理23-31
2.2.1 场效应晶体管的分类23-25
2.2.2 pn型HEMT器件的工作原理25-26
2.2.3 内建电压26-27
2.2.4 HEMT的理想直流Ⅰ-Ⅴ特性27-30
2.2.5 跨导30-31 2.3 小结31-32第三章 HEMT器件的基本模型32-48 3.1 软件Silvaco32-36
3.1.1 DeckBuild33
3.1.2 TonyPlot可视化工具33-34
3.1.3 工艺模拟软件ATHENA34-35
3.1.4 仿真器件ATLAS35-36 3.2 器件模拟的基本模型36-41
3.2.1 迁移率模型36-39
3.2.2 载流子生成-复合模型39-40
3.2.3 碰撞电离40
3.2.4 漂移扩散模型40-41 3.3 器件的材料模型41-46
3.3.1 禁带宽度42-43
3.3.2 介电常数43
3.3.3 载流子的有效质量43-44
3.3.4 有效状态密度44-45
3.3.5 空间电荷45
3.3.6 自热效应45-46 3.4 HEMT器件的结构46 3.5 小结46-48第四章 HEMT器件模型的建立与仿真结果分析48-60 4.1 HEMT器件的极化效应及2DEG48-53
4.1.1 极化效应48-50
4.1.2 Al_xGa_(1-x)N/GaN异质结构中的2DEG50-53 4.2 HEMT器件模型的构建53-56
4.2.1 物理模型的设定53-55
4.2.2 电子以及电势的分布图55-56 4.3 仿真结果与文献实验结果的对比56-59
4.3.1 转移特性56-58
4.3.2 输出特性58-59 4.4 小结59-60第五章 总结60-61致谢61-62参考文献62-65攻硕期间取得的研究成果65
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京公网安备75号只要是第三代材料的模型就可以，求模型。。。。。。。
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本帖最后由 jx_frank 于
16:55 编辑
& & 求大神指点，我能找到的例子只有GaAs的例子，况且这是二代材料，跟三代材料差别很大
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silvaco模拟GaN 例子不少 依例子指出有需要的model 但是}在门cm用性 侵魇欠裼例Y可分享??
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UID1048190&帖子45&精华0&积分137&资产137 信元&发贴收入235 信元&推广收入0 信元&附件收入0 信元&下载支出720 信元&阅读权限10&在线时间23 小时&注册时间&最后登录&
& & 这是什么
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michael1688
& & 能分享一下例子吗？非常感谢。。很难找到例子啊？或者能告诉我哪里能找到GaN的例子吗
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& & 楼主，您好，请问你现在能仿出GaN HEMT的特性了吗？我现在才开始学，仿真的时候基本没有电流，我想问silvaco仿真HEMT直接加极化模型就有电子吗？还是要用别的方法？
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想要怎样结构的HEMT？多少层？
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TI信号链专区正式上线，欢迎访问！SILVACO - Published Papers - Power Devices Simulation
Published Papers
Power Device Simulation
The full text for most of these papers may be found at the IEEE website at
Dondee Navarro1, Iliya Pesic1, Yoji Morikawa1, Yoshiharu Furui1, and Mitiko Miura-Mattausch2,
Silvaco Japan, Yokohama Landmark Tower 36F, 2-2-1 Minatomirai, Nishi-ku, Yokohama 220-8136 Japan
Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530 Japan
Japanese Journal of Applied Physics, Vol. 55, 4S, 04ER12, March 2016.
, pp. 502-503.
Copyright 2015 The Japan Society of Applied Physics
Iliya Pesic1,2, Dondee Navarro2, Masato Fujinaga2, Yoshiharu Furui2, and Mitiko Miura-Mattausch1,
Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima
Silvaco Japan, 4F Miyake Bldg, 549-2 Shinano-cho, Totsuka, Yokohama 244-0801 Japan
International Conference on Solid State Devices and Materials (SSDM) 2014, pp.376-377
Copyright 2014 The Japan Society of Applied Physics
Lei Yong(雷勇)1; 2, Shi Hongbiao(石宏彪)1, Lu Hai(陆海)1, Chen Dunjun(陈敦军)1, Zhang Rong(张荣)1, and Zheng Youdou(郑有炓)1,
Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic
Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology,
Nanjing 210044, China
Copyright 2014 The Japan Society of Applied Physics
Ying Wang, Hai-fan Hu, Cheng-hao Yu, and Hao Lan,
IEEE ELECTRON DEVICE LETTERS
Marco Silvestri, Michael J. Uren, and Martin Kuball,
Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory,
University of Bristol, BS8 1TL Bristol, United Kingdom
Kazuhiro Mochizuki, Senior Member, IEEE, Tomoyoshi Mishima, Senior Member, IEEE, Akihisa Terano, Naoki Kaneda, Takashi Ishigaki, Member, IEEE, and Tomonobu Tsuchiya,
&Numerical Analysis of Forward-Current/Voltage
Characteristics of Vertical GaN Schottky-Barrier Diodes and p-n Diodes on Free-Standing GaN Substrates&
Masataka Miyake1, Fumiya Ueno2, Dondee Navarro3, and Mitiko Miura-Mattausch2,
1HiSIM Research Center, Hiroshima University, Higashihiroshima, Hiroshima 739–8530, Japan
2Grad. Sch. of Advanced Sciences of Matter, Hiroshima Univ., Higashihiroshima, 739–8530, Japan
3SILVACO Japan Co., Ltd., Yokohama, Kanagawa 244–0801, Japan
Silicon Carbide and Related Materials (ECSCRM) 2012, Saint Petersburg, Russia
Ming Qiao, Xi Hu, Hengjuan Wen, Meng Wang, Bo Luo, Xiaorong Luo, Zhuo Wang, Bo Zhang and Zhaoji Li,
Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's May 23-26, 2011.
Dr Ivan Pesic,
8th International Workshop on Compact modeling, January 25, 2011 Yokohama Japan
C. Ronsisvalle, V. Enea, C. Abbate, G. Busatto, F. Iannuzzo, A. Sanseverino, G. A. P. Cirrone,
ISPSD2011.
C. Ronsisvalle, V. Enea, C. Abbate, G. Busatto, A. Sanseverino,
Trans. On Electron Dev., Vol. 57, Issue 9, September 2010, pp. .
Ying Wang, Chao Cheng, Hai-fan Hu,
&Investigation of power Trench MOSFETs with retrograde body profile,&
Microelectronics Reliability, In Press, Corrected Proof, Available online 19 September 2010.
M. A. Bela?d, K. Daoud,
&Evaluation of hot-electron effects on critical parameter drifts in power RF LDMOS transistors,&
Microelectronics Reliability, Vol. 50, Issues 9-11, September-November 2010, pp. .
G. Busatto, G. Curr&, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi,
&Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET,&
Microelectronics Reliability, Vol. 50, Issues 9-11, September-November 2010, pp. .
Nebojsa Jankovic, Petar Igic, Naoki Sakurai,
&Compact model of the IGBTs with localized lifetime control dedicated to power circuit simulations,&
Solid-State Electronics, Vol. 54, Issue 3, March 2010, pp. 268-274.
G. E. Vineyard,
&Investigating the Electrothermal Characteristics of a Gate Turn Off Thyristor During Turn-Off Using SILVACO ATLAS(TM),&
Naval Postgraduate School, Monterey, CA., Jun 2009, pp. 149.
R. S. Saxena and M. Jagadesh Kumar,
&A New Buried-Oxide-In-Drift-Region Trench MOSFET With Improved Breakdown Voltage,&
IEEE Electron Device Letters. Manuscript revised June 23, 2009. Accepted for inclusion in a future issue of this journal.
R. S. Saxena and M. Jagadesh Kumar,
&A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance,&
IEEE Trans Electron Devices, Vol. 56, No. 6, June 2009, pp. .
O. Bengtsson, L. Vestling, J. Olsson,
&A computational load-pull method with harmonic loading for high-efficiency investigations,&
Solid-State Electronics, Vol. 53, Issue 1, January 2009, pp. 86-94.
Fortunato Pezzimenti, Francesco G. Della Corte, Roberta Nipoti,
&Experimental characterization and numerical analysis of the 4H-SiC p–i–n diodes static and transient behaviour,&
Microelectronics Journal, Vol. 39, Issue 12, December 2008, pp. .
L. C. Yu, K. Sheng, J. H. Zhao,
&Modeling and design of a monolithically integrated power converter on SiC,&
Solid-State Electronics, Vol. 52, Issue 10, October 2008, pp. .
Yu. P. Snitovsky, V. V. Nelayev, V. A. Efremov,
&New approach to the manufacturing of power microwave bipolar transistors: A computer simulation,&
Russian Microelectronics, Vol. 36, No. 6, Nov. 2007, pp. 409-414.
Hua Ye, Changwoo Lee, James Raynolds, Pradeep Haldar, Michael J. Hennessy and Eduard K. Mueller,
&Silicon power MOSFET at low temperatures: A two-dimensional computer simulation study&
Cryogenics, Vol. 47, Issue 4, April 2007, pp. 243-251.
Nebojsa Jankovic, Tatjana Pesic and Petar Igic,
&All injection level power PiN diode model including temperature dependence,&
Solid-State Electronics, Vol. 51, Issue 5, May 2007, pp. 719-725.
Guo Liang-Liang, Feng Qian, Hao Yue, Yang Yan,
&Study of high breakdown-voltage AIGaN/GaN FP-HEMT,&
Acta Physica Sinica, Vol. 56, No. 5, May 2007, pp. .
M. Alwan, B. Beydoun, K. Ketata and M. Zoaeter,
&Bias temperature instability from gate charge characteristics investigations in N-Channel Power MOSFET,&
Microelectronics Journal, Vol. 38, Issues 6-7, June-July 2007, pp. 727-734.
M. Alwan, B. Beydoun, K. Ketata and M. Zoaeter,
&Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses,&
Microelectronics Reliability, Vol. 47, Issues 9-11, September-November 2007, pp. .
J. Vobeck? and P. Hazdra,
&Dynamic avalanche in diodes with local lifetime control by means of palladium,&
Microelectronics Journal, In Press, Corrected Proof, Available online 21 December 2007.
Tintori O., Munteanu D., Loussier X., Autran J. L., Regnier A., Bouchakour R,
&Compact modeling and performance analysis of Double-Gate MOSFET-based circuits,&
NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings 3, pp. 812-815.
M. A. Bela?d, K. Ketata, K. Mourgues, M. Gares, M. Masmoudi and J. Marcon,
&Reliability study of power RF LDMOS device under thermal stress&
10 October 2006 Microelectronics Journal 38 (2 SPEC. ISS.), pp. 164-170.
M. Garesa, H. Maananea, M. Masmoudia, P. Bertramb, J. Marcona, M. A. Belaid, K. Mourguesa, C. Tolantb and P. Eudeline,
&Hot carrier reliability of RF N- LDMOS for S Band radar application&
Microelectronics Reliability 46 (9-11), pp. September-November 2006.
C. L. Zhang, K. S. Jeon, C. H. Ahn, J. D. Park, E. D. Kim, Na Zhi, Yong Gao,
&Integrated IC-like Thyristor—based Switching Structure for Pulse Current Generation to Electronic Ignition,&
Power Electronics and Motion Control Conference, 2006. IPEMC 2006. CES/IEEE 5th International Volume 2, 14-16 Aug. 2006 pp. 1 - 4.
M. A. Belaid, K. Ketata, M. Gares, J. Marcon, K. Mourgues, M. Masmoudi,
&2-D simulation and analysis of temperature effects on electrical parameters degradation of power RF LDMOS device,&
Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms), Vol. 253, No. 1-2, Dec. 2006, pp. 250-254.
K. S. Kelkar, N. E. Islam, C. M. Fessler, W. C. Nunnally,
&Investigation of Optically Initiated Avalanche Silicon Carbide High Power Switches,&
Conference Record of the Power Modulator Symposium, 2006. May 2006, pp. 252 - 255.
C. L. Zhang, K. S. Jeon, C. H. Ahn, J. D. Park, E. D. Kim, Na Zhi, Yong Gao,
&Integrated IC-like Thyristory based Switching Structure for Pulse Current Generation to Electronic Ignition,&
Power Electronics and Motion Control Conference, 2006. IPEMC '06. CES/IEEE 5th International Vol. 2, 14-16 Aug. 2006, pp. .
A. Karabegovic, R. M. O'Connell,
&Photoswitch-Controlled Class E RF Power Amplifier,&
Conference Record of the Power Modulator Symposium,
Twenty-Seventh International. 14-18 May 2006, pp. 150 - 152.
De Orio, R. L. Swart, J. W, Marzano, W,
&Design and simulation of a thyristor surge protective device for telecommunication systems&
ECS Transactions Vol. 4, Issue 1, 2006, pp. 319-326.
Z. Wang, A. T. Bryant, J. Wu, P. R. Palmer,
&Implementation and Comparison of Power Diode Models for System Simulation,&
International Conference on Power Electronics and Drives Systems, 2005. PEDS 2005. Vol. 1, Jan. 16-18, 2006, pp. 694 - 699.
P. Bhatnagar, A. B. Horsfall, N. G. Wright, C. M. Johnson, K. V. Vassilevski, A. G. O?Neill,
&Optimisation of a 4H-SiC enhancement mode power JFET for high temperature operation&
Solid-State Electronics, Vol. 49, Issue 3, March 2005, pp. 453-458.
K. S. Kelkar, N. E. Islam, C. M. Fessler, W. C. Nunnally
&Silicon carbide photoconductive switch for high-power, linear-mode operations through sub-band-gap triggering&
Journal of Applied Physics, Vol. 98, Issue 9, 1 November 2005, pp. 1-6.
R. K. Burra, S. K. Mazumder, R. Huang,
&DV/DT related spurious gate turn-on of bidirectional switches in a high-frequency cycloconverter&
IEEE Transactions on Power Electronics, Vol. 20, Issue 6, November 2005, pp. .
G. M. Buiatti, F. Cappelluti, G. Ghione,
&Finite Difference Based Power Diodes Simulation Within SPICE: Modeling Approach and Validation,&
Power Electronics Specialists Conference, 2005. PESC '05. IEEE 36th 2005, pp. 999 - 1003.
M. J. Kumar, V. Parihar,
&Enhanced current gain in SiC power BJTs using a novel surface accumulation layer transistor concept&
Microelectronic Engineering, Vol. 81, Issue 1, July 2005, pp. 90-95.
B. Davenport and S. Michael,
&Advanced thermophotovoltaic cells modeling, optimized for use in radioisotope thermoelectric generators (RTGs) for Mars and deep space missions&
A Collection of the 22nd AIAA International Communications Satellite Systems Conference and Exhibit, 2004.
R. L. Thomas, M. Morgenstern, S. B. Bayne,
&Silvaco modeling of a 10 kV SiC p-i-n diode&
Proceedings of the 26th International Power Modulator Symposium and 2004 High Voltage Workshop.
J. Ankarcrona, K. -H Eklund, L. Vestling, J. Olsson,
&Simulation and modeling of the substrate contribution to the output resistance for RF-LDMOS power transistors&
Solid-State Electronics, Vol. 48, Issue 5, May 2004, pp. 789-797.
M. Vellvehi, D. Flores, X. Jorda, S. Hidalgo, J. Rebollo, L. Coulbeck and P. Waind,
&Design considerations for 6.5 kV IGBT devices&
Microelectronics Journal, Vol. 35, Mar. 2004, pp. 269-275.
H.-C. Cheng, F. -L. Chang, M. -J. Lin, C. -C. Tsai, C. W. Liaw,
&Novel low-temperature polycrystalline-silicon power devices with very-low on-resistance using excimer laser-crystallization&
Journal of the Electrochemical Society, Vol. 151, Issue 12, 2004.
C. -L. Wang, M. -H. Lai, S. -R. Huang, C. -Y. Yeh
&Design of optimum the insulator Design of optimum the insulator gate bipolar transistor using response surface method with cluster analysis&
Jpn. J. Appl. Phys. Vol. 43, 2004, Part 1: Regular Papers and Short Notes and Review Papers.
S. Musumeci, R. Pagano, A. Raciti, G. Belverde, A. Magrì, M. Melito, F. Zara,
&New packaging concepts and physics-based simulation approach for low-voltage power MOSFETs lead to performance improvement in advanced DC-DC converters&
PESC Record - IEEE Annual Power Electronics Specialists Conference, Vol. 2, 2004, pp. .
S. C. Kim, H. W. Kim, K. S. Seo, C. L. Zhang, E. D. Kim,
&Static and dynamic characteristics of the 2.5kV/500A IGCTs&
Proceedings of the International Conference on Microelectronics, Vol. 24 I, 2004, pp. 171-173.
D. Frey, J. L. Schanen, J.L. Aug, O. Lesaint,
&Electric field investigation in IGBT power modules&
Proceedings of the 2004 IEEE International Conference on Solid Dielectrics ICSD 2004, Vol. 2, pp. .
S. Azzopardi, J. M. Vinassa, E. Woirgard, C. Zardini, J. L. Aucouturier,
&What can be the optimum IGBT structure under UIS operation?&
PESC Record - IEEE Annual Power Electronics Specialists Conference, Vol. 4, 2004, pp. .
P. Hazdra, J. Vobecky, H. Dorschner, K. Brand,
&Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons&
Microelectronics Journal, Vol. 35, Issue 3,
March 2004, pp. 249 - 257.
Shuntao Hu and Kuang Sheng,
&A New Edge Termination Technique for SiC Power Devices&
Proceedings of 2003 International Semiconductor Device Research Symposium, Washington DC, December 1, pp. 122-123.
James Fuerherm, Yu Anne Zeng, and Marvin H. White,
&A Study of Interface Charges on the Operation of 4H Silicon Carbide Static (SiC) Static Induction Transistors (SITs)&
Proceedings of 2003 International Semiconductor Device Research Symposium, Washington DC, December 1, pp. 134-135.
S. Azzopardi, E. Woirgard, J. -M. Vinassa, O. Briat, C. Zardini,
&IGBT Power modules thermal characterization: What is the optimum between a low current - High voltage or a high current - Low voltage test condition for the same electrical power?&
Microelectronics Reliability, Vol. 43, Issue 9-11, September 2003, pp. .
Il-Yong Park, et. al.,
&Novel Process Technoques for Fabricating High Density Trench MOSFET with Self-Aligned N+/P+ Source Formed on the Trench Side Wall&
ISPSD?03 Proceedings, pp. 169-172.
Chanho Park et. al.,
&Deep Trench Terminations Using ICP RIE for Ideal Breakdown Voltages&
ISPSD?03 Proceedings, pp. 199-202.
S. Alves et. al.,
&Vertical N-channel FLIMOSFET for Future 12V/42V Dual Batteries Automotive Applications&
ISPSD?03 Proceedings, pp. 308-311.
Timothy Henson and Joe Cao,
&Low Voltage Superjunction MOSFET Simulation and Experiment&
Proc. International Symposium on Power Semiconductor Devices (ISPSD), 2003.
Xiangli Li, Huadian Pan and B. M. Wilamowski,
&Gate-controlled punch through transistor Proceedings of the 15th Biennial University/Government/Industry&
Microelectronics Symposium 2003, 30 Jun-2 Jul 2003, pp. 226-229.
K. Kunihiro, Y. Takahashi, Y. Ohno,
&Physical modeling of off-state breakdown in power GaAs MESFETs&
Solid-State Electronics, Vol. 47, April 2003, pp. 621-631.
J. Vobecky, P. Hazdra, V. Zahlava,
&Impact of the electron, proton and helium irradiation on the forward I-V characteristics of high-power P-i-N diode&
Microelectronics Reliability, Vol. 43, April 2003, pp. 537-544.
R. S. Anand, B. Mazhari and J. Narain,
&A study into the applicability of p+n+ (universal contact) to power semiconductor diodes for faster reverse recovery&
Solid-State Electronics, Vol. 47, Issue 1, Jan. 2003, pp. 83-91.
P. Cova, R. Menozzi and M. Portesine,
&Power p-i-n diodes for snubberless application: H+ irradiation for soft and reliable reverse recovery&
Microelectronics Reliability, Vol. 43, Issue 1, Jan. 2003, pp. 81-87.
K. Kelkar and W. C. Nunnally,
&Semiconductor Modeling for Multi-layer, High Field, Photo-Switch using sub-bandgap Photons&
Digest of Technical Papers-IEEE International Pulsed Power Conference, 2003, pp. 819-822.
Timothy Henson, Joe CaoInternational Rectifier, 233 Kansas St, El Segundo, CA 90245 USA, Phone +01 310 726 8842, Fax +01 310 726 8847 E-mail:
X. Gu, Q. Shui, C. W. Myles, M. A. Gundersen
&Comparison of Si, GaAs, SiC and GaN FET-type switches for pulsed power applications&
Digest of Technical Papers-IEEE International Pulsed Power Conference, 2003, pp. 362-365
K. Shenai, C. Cavallaro, S. Musumeci, R. Pagano, A. Raciti,
&Modeling Low-Voltage Power MOSFETs as Synchronous Rectifiers in Buck Converter Applications&
Conference Record - IAS Annual Meeting (IEEE Industry Applications Society), Vol. 3, 2003.
D. Frey, J. L. Schanen, J. L. Aug, J. L., Lesaint, O.,
&Electric field investigation in high voltage power modules using finite element simulations and partial discharge measurements&
Conference Record - IAS Annual Meeting (IEEE Industry Applications Society), Vol. 2, 2003, pp. .
M. Vellvehi, D. Flores, X. Jord,
&Design and optimisation of suitable edge terminations for 6.5 kV IGBTs&
Microelectronics Journal, Vol. 33, Issue 9, September 2002, pp. 765-769.
K. Shenai, M. Trivedi and P. Neudeck,
&Characterization of Hard- and Soft-Switching Performance of High-Voltage Si and 4H-SiC PiN Diodes&
IEEE Trans. Elect Dev. Sept 2002, pp. .
C. L. Wang,
&Design of Optimum Power Insulated-Gate Bipolar Transistor Using Response Surface Method&
Jpn. J. Appl. Phys., Vol. 41, May 2002, pp. .
C. Tolksdorf, C. Fink, J. Schulze, S. Sedlmaier, W. Hansch, W. Werner, W. Kanert and I. Eisele,
&The vertical concept of power MOSFETs&
Materials Science and Engineering B, Vol. 89, February 2002, pp. 439-443.
J. H. Kim et. al.,
&High Performance Complementary Bipolar Process using PBSOI Technique&
ISPSD?02 Proceedings, pp. 85-88.
Chanho Park et. al.,
&A New Junction Termination Technique Using ICP RIE for Ideal Breakdown Voltages&
ISPSD?02 Proceedings, pp. 257-260.
C. K. Jeon, et. al.,
&Analysis of LDMOS Structure with Inclined P-bottom Region&
ISPSD?02 Proceedings, pp. 293-296.
P. Hazdra, J. Vobecky and K. Brand,
&Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques&
Nucl. Instrum. Meth. B., Vol.186, Jan. 2002, pp. 414-418.
H. Hakim, J. -L. Sanchez, J. -P. Laur, P. Austin, M. Breil,
&The concave junction: An attractive topology to design specific junction terminations&
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2002, pp. 193-196.
A. Raman, D. G. Walker, T. S. Fisher,
&Non-equilibrium thermal effects in power transistors&
American Society of Mechanical Engineers, Heat Transfer Division, (Publication) HTD, Vol. 369, Is.
S. Abedlnpour and K. Shenai,
&Stress analysis of DC-DC power converters&
Proceedings of the Intersociety Energy Conversion Engineering Conference, Vol. 1, 2001, pp. 141.
S. Abedinpour, R. Burra, K. Shenai,
&Two-dimensional finite element simulation and stress analysis of a full bridge DC-DC power converter&
INTELEC, International Telecommunications Energy Conference (Proceedings), 2001, pp. 205-212.
M. J. Urena, D. Leea, B. T. Hughesa et al.,
&Electrical characterization of AlGaN/GaN heterostructure wafers for high-power HFETs&
Journal of Crystal Growth, Vol. 230, 2001, pp. 579 - 583.
C. Fink, J. Schulze, I. Eisele, W. Hansch, W. Werner, W. Kanert,
&Reducing of ROn in vertical Power-MOSFETs due to local channel doping&
Japanese Journal of Applied Physics, 2001, Vol. 40, Issue 4B, pp. 2637.
K. Shenai,
&High-power robust semiconductor electronics technologies in the new millennium&
Microelectronics Journal, Vol. 32, Issues 5-6, 2001, pp. 397-408.
G. Kamoulakos, Th. Haniotakis, Y. Tsiatouhas, J. -P. Schoellkopf and A. Arapoyanni,
&Device simulation of a n-DMOS cell with trench isolation&
Microelectronics Journal, Vol. 32, Issue 1, January 2001, pp. 75-80.
C. Anghel, N. Hefyene, A. Ionescu, M. Vermandel, B. Bakeroot, J.Doutreloigne, R. Gillon, S. Frere, C. Maier, Y. Mourier,
&Investigations and Physical Modelling of Saturation Effects in Lateral DMOS Transistor Architectures Based on the Concept of Intrinsic Drain Voltage&
ESSDERC 2001. pp. 399-402.
Kim S. L. Jeon C. K. Kim J. J. Choi Y. S. Kim M. H. Kang H. S. Song C. S.,
&A New Compact Isolation Structure in High Side Island Region of 600V HVIC,&
Proc. ESSDERC 2001, pp. 415-418.
Frere S.F. Rhayem J. Adawe H.O. Gillon R. Tack M. Walton A.J.,
&LDMOS Capacitance Analysis versus Gate and Drain Biases, Based on Comparison Between TCAD Simulations and Measurements,&
Proc. ESSDERC 2001, pp. 219-222.
Tsai-Sheng Liao, P. Yu, and O. Zucker,
&Analysis of high pulse power generation using novel excitation of IGBT,&
Proceedings of the IEEE 6th International Conference on Solid-State and Integrated-Circuit Technology, Vol. 1. pp. 143-148.
Q. Zhang and T. S. Sudarshan
&Lateral current spreading in SiC schottky diodes using metal overlap edge termination,&
Solid-State Electronics, Vol. 45, 2001, pp. .
C. K. Jeon, J. J. Kim, Y. S. Choi, M. H. Kim, S. L. Kim, H. S. Kang, C. S. Song,
&800V/1A, 1-chip process for battery charger IC,&
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2001, pp. 355-358.
Marc C. Tarplee et al.,
&Design Rules for Field Plate Edge Termination in SiC Schottky Diodes,&
IEEE Trans. Elect. Dev., Vol. 48, No. 12, Dec. 2001, pp. .
Q. Zhang and T. S. Sudarshan,
&Lateral current spreading in SiC Schottky diodes using metal overlap edge termination&
Solid-State Electronics, Vol. 45, Issue 10, October 2001, pp. .
N. L. Rupesinghe, M. Chhowalla, K. B. K. Teo, G. A. J. Amaratunga
&Field emission vacuum power switch using vertically aligned carbon nanotubes&
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2001, Vol. 21, pp. 3-4.
D. Dragomirescu, G. Charitat,
&Improving the dynamic avalanche breakdown of high voltage planar devices using semi-resistive field plates&
Microelectronics Journal, Vol. 32, May-June 2001, pp. 473-479.
P. D. Hewitt and G. T. Reed,
&Improved modulation performance of a silicon p-i-n device by trench isolation&
Journal of Lightwave Technology, Vol. 19, Issue 3, March 2001, pp. 387-390.
C. J. Hung, P. Roblin, and S. Akhtar,
&Distributed b-spline electrothermal models of thyristors proposed for circuit simulation of power electronics&
IEEE Transactions On Electron Devices, 48(2):353-366, February 2001.
B. You, A. Q. Huang, J. K. O. Sin,
&A 600-V, 10-A trench bipolar junction diode with superior static and dynamic characteristics&
IEEE Transactions on Electron Devices, Vol. 48, Issue 9, September 2001, pp. .
N. Cezac, F. Morancho, P. Rossel, H. Tranduc, A. Peyre-Lavigne
&New generation of power MOSFET based on the concept of `Floating Islands?&
EPJ Applied Physics, Vol. 10, Issue 3, June 2000, pp. 203-209.
K. Shenai, E. McShane, S. K. Leong, (sub T on fT title)
&Lateral RF SOI power MOSFETs with fT of 6.9 GHz&
IEEE Electron Device Letters, Vol. 21, Issue 10, October 2000, pp. 500-502.
K. Shenai and M. Trivedi,
&Silicon carbide power electronics for high temperature applications&
IEEE Aerospace Conference Proceedings, Vol. 5, 2000, pp. 431-437.
E. McShane and K. Shenai,
&Microwave performance of power MOSFETs on SOI substrates&
Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices, pp. 148-157.
S. Azzopardi, M. Trivedi, C. Zardini and K. Shenai,
&Non-destructive extraction of technological parameters for numerical simulation of conventional planar punch-through IGBT&
Solid-State Electronics, Vol. 44, Issue 11, 1 November 2000, pp. .
I. M. Gordion, Z. S. Gribnikov, V. A. Korobov and V. V. Mitin,
&Fast gate turn-off in a merged thyristor-like structure&
Solid-State Electronics, Vol. 44, Issue 10, 1 October 2000, pp. .
M. Trivedi and K. Shenai,
&Practical limits of high-voltage thyristors on wide band-gap materials&
Journal of Applied Physics, Vol. 88, Issue 12, 15 December 2000, pp. .
K. Sheng, F. Udrea and G. A. J. Amaratunga,
&Optimum carrier distribution of the IGBT&
Solid-State Electronics, Vol. 44, Issue 9, 1 September 2000, pp. .
J. Vobecky, P. Hazdra, O. Humbel and N. Galster,
&Crossing point current of electron and proton irradiated power P-i-N diodes&
Microelectronics Reliability, Vol. 40, Issue 3, 17 March 2000, pp. 427-433.
M. Hossin, C. M. Johnson, N. G. Wright and A. G. O?Neill,
&Evaluation of GaAs Schottky gate bipolar transistor (SGBT) by electrothermal simulation&
Solid-State Electronics, Vol. 44, Issue 1, January 2000, pp. 85-94.
P. D. Hewitt and G. T. Reed,
&Improving the response of optical phase modulators in SOI by computer simulation&
Journal of Lightwave Technology, Vol. 18, Issue 3, March 2000, pp. 443-450.
F. Z. Mezroua and R. Abid,
&Two-dimensional simulation of the transient electrothermal effects during the gate turn-off thyristor turn-off&
Journal of Vac. Sci. Technol. A, Vol. 18, Issue 2, 2000, pp. 787 - 792.
Changli Zhang, J. Waldmeyer, P. Roggwiller, Zhiming Chen, and Yapeng Lu,
&Soft recovery characteristics of punch-through power diodes by proton irradiation&
Proceedings of the 3rd IEEE International Symposium on Power Electronics and Motion Control, 2000, Vol. 1. pp. 229-234.
P. B. Shah, K. A. Jones, A. K. Agarwal, and S. Seshadri,
&In-depth analysis of SiC GTO thyristor performance using numerical simulations&
Solid-State Electronics, Vol. 44, 2000, pp. 353-358.
A. Vandooren, S. Cristoloveanu, and J. P. Colinge,
&The dynamic conductance and transconductance in double-gate (gate-all-round) SOI devices&
Proceeding of IEEE International SOI Conference, 2000, pp. 116-117.
Vermandel L. Doutreloigne J. Moens P Tack M.,
&Using the Self Aligned Field Implant To Design High Voltage Devices in Sub-um CMOS Technologies&
Proc. ESSDERC 2000, pp. 228-231.
N. Cezac et al.,
&A new generation of power unipolar devices: the concept of the floating islands MOS transistor (FLIMOST)&
ISPSD?2000, Toulouse, pp. 69-72.
C. Finkl et al.,
&Vertical Power-MOSFETs with Local Channel Doping&
Proc. IEDM 2000, pp. 71-74.
Vickram R. Vathulya and Marvin H. White,
&Characterization and performance comparison of the power DIMOS structure fabricated with a reduced thermal budget in 4H and 6H-SiC&
Solid-State Electronics, Vol. 44, Issue 2, 2000, pp. 309-315.
B. H. Stark and P. P. Palmer,
&Switching aspects of hybrid semiconductor power devices&
IEE Colloquium (Digest), Issue 30, 1999.
N. S. Saks, S. S. Mani, A. K. Agarwal, M. G. Ancona,
&475-V high-voltage 6H-SiC lateral MOSFET&
IEEE Electron Device Letters, Vol. 20, Issue 8, August 1999, pp. 431-433.
B. H. Stark and P. R. Palmer,
&Single-gated multiple-mode power semiconductor devices&
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AlGaN/GaN HEMT器件特性仿真
【摘要】：近十几年来,随着半导体技术的快速发展,传统的Si和GaAs等基的器件性能已经接近极限,不能满足半导体的应用需要。由于材料上以及电学属性上的优势,新型的三代半导体宽禁带材料GaN、AlGaN和SiC等基的微波器件能够突破其上限极限,达到常规半导体难以达到的性能指标。由于这个原因,目前三代半导体GaN材料的AlGaN/GaN HEMTs由于其优越的研究前景而成为目前的热点研究对象。
本学位论文主要针对上述的问题,在充分了解了AlGaN/GaN HEMTs器件的发展状况以及其工作原理的基础上,构建了一个简单的AlGaN/GaN HEMTs器件模型,并且对该模型进行了器件的相关电学属性模拟与仿真。主要的工作有以下几方面：
1.作者对HEMT器件性能以及工作原理进行了研究,而且总结很多GaN等材料的电学属性的参数。
2.简要概述了一个半导体器件物理的概论,是各种各样器件特性的基础,介绍了器件的结构与工作原理。在此基础上详细介绍了HEMT器件的特性,主要有其输出特性、转移特性等方面,这些对于HEMT器件应用有着很重要的作用。
3.介绍Silvaco软件的使用方法,详细介绍了模拟中要用到的基本模型如迁移率模型、载流子生成-复合模型、碰撞电离模型和漂移扩散模型等,以及模拟时需要的材料模型如材料的禁带宽度、介电常数、载流子的有效质量、有效状态密度、空间电荷和自热效应等,随后分析了器件中的极化效应的产生原因,如自发极化效应和压电极化效应的产生,在此基础上,介绍了二维电子气的产生原因,分析了二维电子气对器件性能的影响,随后介绍了HEMT器件的基本结构。
4.从多方面分析了影响器件性能的参数,利用Silvaco软件来构建和设计简单的模型,并且对所建立的模型的载流子浓度、转移特性、输出特性等进行了比较详细的仿真以及分析。将得到的仿真结果与实验结果进行了详细的对比分析,并且对结果的偏差做了充分的解释。
【关键词】：
【学位授予单位】：电子科技大学【学位级别】：硕士【学位授予年份】：2012【分类号】：TN305【目录】：
摘要4-5ABSTRACT5-10第一章 绪论10-15 1.1 AlGaN/GaN HEMT器件的研究背景及其历史10-13
1.1.1 GaN材料的发展10-11
1.1.2 国内外研究动态11-13 1.2 本文主要研究内容13-14 1.3 本章小结14-15第二章 基本理论15-32 2.1 半导体模拟的物理基础15-23
2.1.1 半导体的形态15-17
2.1.2 载流子迁移率17
2.1.3 输运方程17-18
2.1.4 载流子的复合和产生18-20
2.1.5 泊松方程20-21
2.1.6 半导体器件的基本方程21
2.1.7 非平衡载流子浓度21-23 2.2 HEMT器件的工作原理23-31
2.2.1 场效应晶体管的分类23-25
2.2.2 pn型HEMT器件的工作原理25-26
2.2.3 内建电压26-27
2.2.4 HEMT的理想直流Ⅰ-Ⅴ特性27-30
2.2.5 跨导30-31 2.3 小结31-32第三章 HEMT器件的基本模型32-48 3.1 软件Silvaco32-36
3.1.1 DeckBuild33
3.1.2 TonyPlot可视化工具33-34
3.1.3 工艺模拟软件ATHENA34-35
3.1.4 仿真器件ATLAS35-36 3.2 器件模拟的基本模型36-41
3.2.1 迁移率模型36-39
3.2.2 载流子生成-复合模型39-40
3.2.3 碰撞电离40
3.2.4 漂移扩散模型40-41 3.3 器件的材料模型41-46
3.3.1 禁带宽度42-43
3.3.2 介电常数43
3.3.3 载流子的有效质量43-44
3.3.4 有效状态密度44-45
3.3.5 空间电荷45
3.3.6 自热效应45-46 3.4 HEMT器件的结构46 3.5 小结46-48第四章 HEMT器件模型的建立与仿真结果分析48-60 4.1 HEMT器件的极化效应及2DEG48-53
4.1.1 极化效应48-50
4.1.2 Al_xGa_(1-x)N/GaN异质结构中的2DEG50-53 4.2 HEMT器件模型的构建53-56
4.2.1 物理模型的设定53-55
4.2.2 电子以及电势的分布图55-56 4.3 仿真结果与文献实验结果的对比56-59
4.3.1 转移特性56-58
4.3.2 输出特性58-59 4.4 小结59-60第五章 总结60-61致谢61-62参考文献62-65攻硕期间取得的研究成果65
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张锦文,张太平,王玮,宁宝俊,武国英;[J];半导体学报;2001年06期
虞丽生,Qiao D,Lau S S;[J];量子电子学报;2000年05期
邵庆辉,李蓓,叶志镇;[J];微纳电子技术;2003年02期
李玉增;[J];稀有金属;1997年01期
中国重要会议论文全文数据库
康俊勇;;[A];第十一届全国MOCVD学术会议论文集[C];2010年
魏萌;王晓亮;潘旭;李建平;刘宏新;肖红领;王翠梅;李晋闽;王占国;;[A];第十一届全国MOCVD学术会议论文集[C];2010年
郭智博;汪莱;郝智彪;;[A];2011中国材料研讨会论文摘要集[C];2011年
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江永清;李应辉;黄烈云;肖灿;叶嗣荣;向勇军;;[A];2004全国图像传感器技术学术交流会议论文集[C];2004年
;[A];第十一届全国MOCVD学术会议论文集[C];2010年
;[A];第十一届全国MOCVD学术会议论文集[C];2010年
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刘斌;张荣;谢自力;张曾;李亮;刘启佳;赵红;修向前;陈鹏;陆海;顾书林;江若琏;韩平;施毅;郑有炓;;[A];第十六届全国半导体物理学术会议论文摘要集[C];2007年
中国博士学位论文全文数据库
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卢盛辉;[D];电子科技大学;2010年
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曾慧中;[D];电子科技大学;2010年
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中国硕士学位论文全文数据库
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申艳芬;[D];山东大学;2011年
张明华;[D];山东大学;2011年
王勇淮;[D];西安电子科技大学;2011年
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京公网安备75号只要是第三代材料的模型就可以，求模型。。。。。。。
UID480718&帖子87&精华0&积分0&资产0 信元&发贴收入625 信元&推广收入0 信元&附件收入0 信元&下载支出884 信元&阅读权限10&在线时间10 小时&注册时间&最后登录&
UID806096&帖子51&精华0&积分1056&资产1056 信元&发贴收入310 信元&推广收入0 信元&附件收入941 信元&下载支出245 信元&阅读权限30&在线时间16 小时&注册时间&最后登录&
本帖最后由 jx_frank 于
16:55 编辑
& & 求大神指点，我能找到的例子只有GaAs的例子，况且这是二代材料，跟三代材料差别很大
UID1037475&帖子9&精华0&积分833&资产833 信元&发贴收入50 信元&推广收入0 信元&附件收入0 信元&下载支出277 信元&阅读权限30&在线时间37 小时&注册时间&最后登录&
silvaco模拟GaN 例子不少 依例子指出有需要的model 但是}在门cm用性 侵魇欠裼例Y可分享??
UID1048190&帖子45&精华0&积分137&资产137 信元&发贴收入235 信元&推广收入0 信元&附件收入0 信元&下载支出720 信元&阅读权限10&在线时间23 小时&注册时间&最后登录&
UID1048190&帖子45&精华0&积分137&资产137 信元&发贴收入235 信元&推广收入0 信元&附件收入0 信元&下载支出720 信元&阅读权限10&在线时间23 小时&注册时间&最后登录&
& & 这是什么
UID1101885&帖子67&精华0&积分236&资产236 信元&发贴收入335 信元&推广收入0 信元&附件收入0 信元&下载支出539 信元&阅读权限20&在线时间45 小时&注册时间&最后登录&
michael1688
& & 能分享一下例子吗？非常感谢。。很难找到例子啊？或者能告诉我哪里能找到GaN的例子吗
UID142119&帖子389&精华0&积分148944&资产148944 信元&发贴收入2195 信元&推广收入80 信元&附件收入151641 信元&下载支出9170 信元&阅读权限100&在线时间391 小时&注册时间&最后登录&
& & 楼主，您好，请问你现在能仿出GaN HEMT的特性了吗？我现在才开始学，仿真的时候基本没有电流，我想问silvaco仿真HEMT直接加极化模型就有电子吗？还是要用别的方法？
UID914275&帖子57&精华0&积分953&资产953 信元&发贴收入330 信元&推广收入0 信元&附件收入166 信元&下载支出253 信元&阅读权限30&在线时间59 小时&注册时间&最后登录&
想要怎样结构的HEMT？多少层？
[通过 QQ、MSN 分享给朋友]
TI信号链专区正式上线，欢迎访问！SILVACO - Published Papers - Power Devices Simulation
Published Papers
Power Device Simulation
The full text for most of these papers may be found at the IEEE website at
Dondee Navarro1, Iliya Pesic1, Yoji Morikawa1, Yoshiharu Furui1, and Mitiko Miura-Mattausch2,
Silvaco Japan, Yokohama Landmark Tower 36F, 2-2-1 Minatomirai, Nishi-ku, Yokohama 220-8136 Japan
Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530 Japan
Japanese Journal of Applied Physics, Vol. 55, 4S, 04ER12, March 2016.
, pp. 502-503.
Copyright 2015 The Japan Society of Applied Physics
Iliya Pesic1,2, Dondee Navarro2, Masato Fujinaga2, Yoshiharu Furui2, and Mitiko Miura-Mattausch1,
Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima
Silvaco Japan, 4F Miyake Bldg, 549-2 Shinano-cho, Totsuka, Yokohama 244-0801 Japan
International Conference on Solid State Devices and Materials (SSDM) 2014, pp.376-377
Copyright 2014 The Japan Society of Applied Physics
Lei Yong(雷勇)1; 2, Shi Hongbiao(石宏彪)1, Lu Hai(陆海)1, Chen Dunjun(陈敦军)1, Zhang Rong(张荣)1, and Zheng Youdou(郑有炓)1,
Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic
Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology,
Nanjing 210044, China
Copyright 2014 The Japan Society of Applied Physics
Ying Wang, Hai-fan Hu, Cheng-hao Yu, and Hao Lan,
IEEE ELECTRON DEVICE LETTERS
Marco Silvestri, Michael J. Uren, and Martin Kuball,
Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory,
University of Bristol, BS8 1TL Bristol, United Kingdom
Kazuhiro Mochizuki, Senior Member, IEEE, Tomoyoshi Mishima, Senior Member, IEEE, Akihisa Terano, Naoki Kaneda, Takashi Ishigaki, Member, IEEE, and Tomonobu Tsuchiya,
&Numerical Analysis of Forward-Current/Voltage
Characteristics of Vertical GaN Schottky-Barrier Diodes and p-n Diodes on Free-Standing GaN Substrates&
Masataka Miyake1, Fumiya Ueno2, Dondee Navarro3, and Mitiko Miura-Mattausch2,
1HiSIM Research Center, Hiroshima University, Higashihiroshima, Hiroshima 739–8530, Japan
2Grad. Sch. of Advanced Sciences of Matter, Hiroshima Univ., Higashihiroshima, 739–8530, Japan
3SILVACO Japan Co., Ltd., Yokohama, Kanagawa 244–0801, Japan
Silicon Carbide and Related Materials (ECSCRM) 2012, Saint Petersburg, Russia
Ming Qiao, Xi Hu, Hengjuan Wen, Meng Wang, Bo Luo, Xiaorong Luo, Zhuo Wang, Bo Zhang and Zhaoji Li,
Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's May 23-26, 2011.
Dr Ivan Pesic,
8th International Workshop on Compact modeling, January 25, 2011 Yokohama Japan
C. Ronsisvalle, V. Enea, C. Abbate, G. Busatto, F. Iannuzzo, A. Sanseverino, G. A. P. Cirrone,
ISPSD2011.
C. Ronsisvalle, V. Enea, C. Abbate, G. Busatto, A. Sanseverino,
Trans. On Electron Dev., Vol. 57, Issue 9, September 2010, pp. .
Ying Wang, Chao Cheng, Hai-fan Hu,
&Investigation of power Trench MOSFETs with retrograde body profile,&
Microelectronics Reliability, In Press, Corrected Proof, Available online 19 September 2010.
M. A. Bela?d, K. Daoud,
&Evaluation of hot-electron effects on critical parameter drifts in power RF LDMOS transistors,&
Microelectronics Reliability, Vol. 50, Issues 9-11, September-November 2010, pp. .
G. Busatto, G. Curr&, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi,
&Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET,&
Microelectronics Reliability, Vol. 50, Issues 9-11, September-November 2010, pp. .
Nebojsa Jankovic, Petar Igic, Naoki Sakurai,
&Compact model of the IGBTs with localized lifetime control dedicated to power circuit simulations,&
Solid-State Electronics, Vol. 54, Issue 3, March 2010, pp. 268-274.
G. E. Vineyard,
&Investigating the Electrothermal Characteristics of a Gate Turn Off Thyristor During Turn-Off Using SILVACO ATLAS(TM),&
Naval Postgraduate School, Monterey, CA., Jun 2009, pp. 149.
R. S. Saxena and M. Jagadesh Kumar,
&A New Buried-Oxide-In-Drift-Region Trench MOSFET With Improved Breakdown Voltage,&
IEEE Electron Device Letters. Manuscript revised June 23, 2009. Accepted for inclusion in a future issue of this journal.
R. S. Saxena and M. Jagadesh Kumar,
&A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance,&
IEEE Trans Electron Devices, Vol. 56, No. 6, June 2009, pp. .
O. Bengtsson, L. Vestling, J. Olsson,
&A computational load-pull method with harmonic loading for high-efficiency investigations,&
Solid-State Electronics, Vol. 53, Issue 1, January 2009, pp. 86-94.
Fortunato Pezzimenti, Francesco G. Della Corte, Roberta Nipoti,
&Experimental characterization and numerical analysis of the 4H-SiC p–i–n diodes static and transient behaviour,&
Microelectronics Journal, Vol. 39, Issue 12, December 2008, pp. .
L. C. Yu, K. Sheng, J. H. Zhao,
&Modeling and design of a monolithically integrated power converter on SiC,&
Solid-State Electronics, Vol. 52, Issue 10, October 2008, pp. .
Yu. P. Snitovsky, V. V. Nelayev, V. A. Efremov,
&New approach to the manufacturing of power microwave bipolar transistors: A computer simulation,&
Russian Microelectronics, Vol. 36, No. 6, Nov. 2007, pp. 409-414.
Hua Ye, Changwoo Lee, James Raynolds, Pradeep Haldar, Michael J. Hennessy and Eduard K. Mueller,
&Silicon power MOSFET at low temperatures: A two-dimensional computer simulation study&
Cryogenics, Vol. 47, Issue 4, April 2007, pp. 243-251.
Nebojsa Jankovic, Tatjana Pesic and Petar Igic,
&All injection level power PiN diode model including temperature dependence,&
Solid-State Electronics, Vol. 51, Issue 5, May 2007, pp. 719-725.
Guo Liang-Liang, Feng Qian, Hao Yue, Yang Yan,
&Study of high breakdown-voltage AIGaN/GaN FP-HEMT,&
Acta Physica Sinica, Vol. 56, No. 5, May 2007, pp. .
M. Alwan, B. Beydoun, K. Ketata and M. Zoaeter,
&Bias temperature instability from gate charge characteristics investigations in N-Channel Power MOSFET,&
Microelectronics Journal, Vol. 38, Issues 6-7, June-July 2007, pp. 727-734.
M. Alwan, B. Beydoun, K. Ketata and M. Zoaeter,
&Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses,&
Microelectronics Reliability, Vol. 47, Issues 9-11, September-November 2007, pp. .
J. Vobeck? and P. Hazdra,
&Dynamic avalanche in diodes with local lifetime control by means of palladium,&
Microelectronics Journal, In Press, Corrected Proof, Available online 21 December 2007.
Tintori O., Munteanu D., Loussier X., Autran J. L., Regnier A., Bouchakour R,
&Compact modeling and performance analysis of Double-Gate MOSFET-based circuits,&
NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings 3, pp. 812-815.
M. A. Bela?d, K. Ketata, K. Mourgues, M. Gares, M. Masmoudi and J. Marcon,
&Reliability study of power RF LDMOS device under thermal stress&
10 October 2006 Microelectronics Journal 38 (2 SPEC. ISS.), pp. 164-170.
M. Garesa, H. Maananea, M. Masmoudia, P. Bertramb, J. Marcona, M. A. Belaid, K. Mourguesa, C. Tolantb and P. Eudeline,
&Hot carrier reliability of RF N- LDMOS for S Band radar application&
Microelectronics Reliability 46 (9-11), pp. September-November 2006.
C. L. Zhang, K. S. Jeon, C. H. Ahn, J. D. Park, E. D. Kim, Na Zhi, Yong Gao,
&Integrated IC-like Thyristor—based Switching Structure for Pulse Current Generation to Electronic Ignition,&
Power Electronics and Motion Control Conference, 2006. IPEMC 2006. CES/IEEE 5th International Volume 2, 14-16 Aug. 2006 pp. 1 - 4.
M. A. Belaid, K. Ketata, M. Gares, J. Marcon, K. Mourgues, M. Masmoudi,
&2-D simulation and analysis of temperature effects on electrical parameters degradation of power RF LDMOS device,&
Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms), Vol. 253, No. 1-2, Dec. 2006, pp. 250-254.
K. S. Kelkar, N. E. Islam, C. M. Fessler, W. C. Nunnally,
&Investigation of Optically Initiated Avalanche Silicon Carbide High Power Switches,&
Conference Record of the Power Modulator Symposium, 2006. May 2006, pp. 252 - 255.
C. L. Zhang, K. S. Jeon, C. H. Ahn, J. D. Park, E. D. Kim, Na Zhi, Yong Gao,
&Integrated IC-like Thyristory based Switching Structure for Pulse Current Generation to Electronic Ignition,&
Power Electronics and Motion Control Conference, 2006. IPEMC '06. CES/IEEE 5th International Vol. 2, 14-16 Aug. 2006, pp. .
A. Karabegovic, R. M. O'Connell,
&Photoswitch-Controlled Class E RF Power Amplifier,&
Conference Record of the Power Modulator Symposium,
Twenty-Seventh International. 14-18 May 2006, pp. 150 - 152.
De Orio, R. L. Swart, J. W, Marzano, W,
&Design and simulation of a thyristor surge protective device for telecommunication systems&
ECS Transactions Vol. 4, Issue 1, 2006, pp. 319-326.
Z. Wang, A. T. Bryant, J. Wu, P. R. Palmer,
&Implementation and Comparison of Power Diode Models for System Simulation,&
International Conference on Power Electronics and Drives Systems, 2005. PEDS 2005. Vol. 1, Jan. 16-18, 2006, pp. 694 - 699.
P. Bhatnagar, A. B. Horsfall, N. G. Wright, C. M. Johnson, K. V. Vassilevski, A. G. O?Neill,
&Optimisation of a 4H-SiC enhancement mode power JFET for high temperature operation&
Solid-State Electronics, Vol. 49, Issue 3, March 2005, pp. 453-458.
K. S. Kelkar, N. E. Islam, C. M. Fessler, W. C. Nunnally
&Silicon carbide photoconductive switch for high-power, linear-mode operations through sub-band-gap triggering&
Journal of Applied Physics, Vol. 98, Issue 9, 1 November 2005, pp. 1-6.
R. K. Burra, S. K. Mazumder, R. Huang,
&DV/DT related spurious gate turn-on of bidirectional switches in a high-frequency cycloconverter&
IEEE Transactions on Power Electronics, Vol. 20, Issue 6, November 2005, pp. .
G. M. Buiatti, F. Cappelluti, G. Ghione,
&Finite Difference Based Power Diodes Simulation Within SPICE: Modeling Approach and Validation,&
Power Electronics Specialists Conference, 2005. PESC '05. IEEE 36th 2005, pp. 999 - 1003.
M. J. Kumar, V. Parihar,
&Enhanced current gain in SiC power BJTs using a novel surface accumulation layer transistor concept&
Microelectronic Engineering, Vol. 81, Issue 1, July 2005, pp. 90-95.
B. Davenport and S. Michael,
&Advanced thermophotovoltaic cells modeling, optimized for use in radioisotope thermoelectric generators (RTGs) for Mars and deep space missions&
A Collection of the 22nd AIAA International Communications Satellite Systems Conference and Exhibit, 2004.
R. L. Thomas, M. Morgenstern, S. B. Bayne,
&Silvaco modeling of a 10 kV SiC p-i-n diode&
Proceedings of the 26th International Power Modulator Symposium and 2004 High Voltage Workshop.
J. Ankarcrona, K. -H Eklund, L. Vestling, J. Olsson,
&Simulation and modeling of the substrate contribution to the output resistance for RF-LDMOS power transistors&
Solid-State Electronics, Vol. 48, Issue 5, May 2004, pp. 789-797.
M. Vellvehi, D. Flores, X. Jorda, S. Hidalgo, J. Rebollo, L. Coulbeck and P. Waind,
&Design considerations for 6.5 kV IGBT devices&
Microelectronics Journal, Vol. 35, Mar. 2004, pp. 269-275.
H.-C. Cheng, F. -L. Chang, M. -J. Lin, C. -C. Tsai, C. W. Liaw,
&Novel low-temperature polycrystalline-silicon power devices with very-low on-resistance using excimer laser-crystallization&
Journal of the Electrochemical Society, Vol. 151, Issue 12, 2004.
C. -L. Wang, M. -H. Lai, S. -R. Huang, C. -Y. Yeh
&Design of optimum the insulator Design of optimum the insulator gate bipolar transistor using response surface method with cluster analysis&
Jpn. J. Appl. Phys. Vol. 43, 2004, Part 1: Regular Papers and Short Notes and Review Papers.
S. Musumeci, R. Pagano, A. Raciti, G. Belverde, A. Magrì, M. Melito, F. Zara,
&New packaging concepts and physics-based simulation approach for low-voltage power MOSFETs lead to performance improvement in advanced DC-DC converters&
PESC Record - IEEE Annual Power Electronics Specialists Conference, Vol. 2, 2004, pp. .
S. C. Kim, H. W. Kim, K. S. Seo, C. L. Zhang, E. D. Kim,
&Static and dynamic characteristics of the 2.5kV/500A IGCTs&
Proceedings of the International Conference on Microelectronics, Vol. 24 I, 2004, pp. 171-173.
D. Frey, J. L. Schanen, J.L. Aug, O. Lesaint,
&Electric field investigation in IGBT power modules&
Proceedings of the 2004 IEEE International Conference on Solid Dielectrics ICSD 2004, Vol. 2, pp. .
S. Azzopardi, J. M. Vinassa, E. Woirgard, C. Zardini, J. L. Aucouturier,
&What can be the optimum IGBT structure under UIS operation?&
PESC Record - IEEE Annual Power Electronics Specialists Conference, Vol. 4, 2004, pp. .
P. Hazdra, J. Vobecky, H. Dorschner, K. Brand,
&Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons&
Microelectronics Journal, Vol. 35, Issue 3,
March 2004, pp. 249 - 257.
Shuntao Hu and Kuang Sheng,
&A New Edge Termination Technique for SiC Power Devices&
Proceedings of 2003 International Semiconductor Device Research Symposium, Washington DC, December 1, pp. 122-123.
James Fuerherm, Yu Anne Zeng, and Marvin H. White,
&A Study of Interface Charges on the Operation of 4H Silicon Carbide Static (SiC) Static Induction Transistors (SITs)&
Proceedings of 2003 International Semiconductor Device Research Symposium, Washington DC, December 1, pp. 134-135.
S. Azzopardi, E. Woirgard, J. -M. Vinassa, O. Briat, C. Zardini,
&IGBT Power modules thermal characterization: What is the optimum between a low current - High voltage or a high current - Low voltage test condition for the same electrical power?&
Microelectronics Reliability, Vol. 43, Issue 9-11, September 2003, pp. .
Il-Yong Park, et. al.,
&Novel Process Technoques for Fabricating High Density Trench MOSFET with Self-Aligned N+/P+ Source Formed on the Trench Side Wall&
ISPSD?03 Proceedings, pp. 169-172.
Chanho Park et. al.,
&Deep Trench Terminations Using ICP RIE for Ideal Breakdown Voltages&
ISPSD?03 Proceedings, pp. 199-202.
S. Alves et. al.,
&Vertical N-channel FLIMOSFET for Future 12V/42V Dual Batteries Automotive Applications&
ISPSD?03 Proceedings, pp. 308-311.
Timothy Henson and Joe Cao,
&Low Voltage Superjunction MOSFET Simulation and Experiment&
Proc. International Symposium on Power Semiconductor Devices (ISPSD), 2003.
Xiangli Li, Huadian Pan and B. M. Wilamowski,
&Gate-controlled punch through transistor Proceedings of the 15th Biennial University/Government/Industry&
Microelectronics Symposium 2003, 30 Jun-2 Jul 2003, pp. 226-229.
K. Kunihiro, Y. Takahashi, Y. Ohno,
&Physical modeling of off-state breakdown in power GaAs MESFETs&
Solid-State Electronics, Vol. 47, April 2003, pp. 621-631.
J. Vobecky, P. Hazdra, V. Zahlava,
&Impact of the electron, proton and helium irradiation on the forward I-V characteristics of high-power P-i-N diode&
Microelectronics Reliability, Vol. 43, April 2003, pp. 537-544.
R. S. Anand, B. Mazhari and J. Narain,
&A study into the applicability of p+n+ (universal contact) to power semiconductor diodes for faster reverse recovery&
Solid-State Electronics, Vol. 47, Issue 1, Jan. 2003, pp. 83-91.
P. Cova, R. Menozzi and M. Portesine,
&Power p-i-n diodes for snubberless application: H+ irradiation for soft and reliable reverse recovery&
Microelectronics Reliability, Vol. 43, Issue 1, Jan. 2003, pp. 81-87.
K. Kelkar and W. C. Nunnally,
&Semiconductor Modeling for Multi-layer, High Field, Photo-Switch using sub-bandgap Photons&
Digest of Technical Papers-IEEE International Pulsed Power Conference, 2003, pp. 819-822.
Timothy Henson, Joe CaoInternational Rectifier, 233 Kansas St, El Segundo, CA 90245 USA, Phone +01 310 726 8842, Fax +01 310 726 8847 E-mail:
X. Gu, Q. Shui, C. W. Myles, M. A. Gundersen
&Comparison of Si, GaAs, SiC and GaN FET-type switches for pulsed power applications&
Digest of Technical Papers-IEEE International Pulsed Power Conference, 2003, pp. 362-365
K. Shenai, C. Cavallaro, S. Musumeci, R. Pagano, A. Raciti,
&Modeling Low-Voltage Power MOSFETs as Synchronous Rectifiers in Buck Converter Applications&
Conference Record - IAS Annual Meeting (IEEE Industry Applications Society), Vol. 3, 2003.
D. Frey, J. L. Schanen, J. L. Aug, J. L., Lesaint, O.,
&Electric field investigation in high voltage power modules using finite element simulations and partial discharge measurements&
Conference Record - IAS Annual Meeting (IEEE Industry Applications Society), Vol. 2, 2003, pp. .
M. Vellvehi, D. Flores, X. Jord,
&Design and optimisation of suitable edge terminations for 6.5 kV IGBTs&
Microelectronics Journal, Vol. 33, Issue 9, September 2002, pp. 765-769.
K. Shenai, M. Trivedi and P. Neudeck,
&Characterization of Hard- and Soft-Switching Performance of High-Voltage Si and 4H-SiC PiN Diodes&
IEEE Trans. Elect Dev. Sept 2002, pp. .
C. L. Wang,
&Design of Optimum Power Insulated-Gate Bipolar Transistor Using Response Surface Method&
Jpn. J. Appl. Phys., Vol. 41, May 2002, pp. .
C. Tolksdorf, C. Fink, J. Schulze, S. Sedlmaier, W. Hansch, W. Werner, W. Kanert and I. Eisele,
&The vertical concept of power MOSFETs&
Materials Science and Engineering B, Vol. 89, February 2002, pp. 439-443.
J. H. Kim et. al.,
&High Performance Complementary Bipolar Process using PBSOI Technique&
ISPSD?02 Proceedings, pp. 85-88.
Chanho Park et. al.,
&A New Junction Termination Technique Using ICP RIE for Ideal Breakdown Voltages&
ISPSD?02 Proceedings, pp. 257-260.
C. K. Jeon, et. al.,
&Analysis of LDMOS Structure with Inclined P-bottom Region&
ISPSD?02 Proceedings, pp. 293-296.
P. Hazdra, J. Vobecky and K. Brand,
&Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques&
Nucl. Instrum. Meth. B., Vol.186, Jan. 2002, pp. 414-418.
H. Hakim, J. -L. Sanchez, J. -P. Laur, P. Austin, M. Breil,
&The concave junction: An attractive topology to design specific junction terminations&
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2002, pp. 193-196.
A. Raman, D. G. Walker, T. S. Fisher,
&Non-equilibrium thermal effects in power transistors&
American Society of Mechanical Engineers, Heat Transfer Division, (Publication) HTD, Vol. 369, Is.
S. Abedlnpour and K. Shenai,
&Stress analysis of DC-DC power converters&
Proceedings of the Intersociety Energy Conversion Engineering Conference, Vol. 1, 2001, pp. 141.
S. Abedinpour, R. Burra, K. Shenai,
&Two-dimensional finite element simulation and stress analysis of a full bridge DC-DC power converter&
INTELEC, International Telecommunications Energy Conference (Proceedings), 2001, pp. 205-212.
M. J. Urena, D. Leea, B. T. Hughesa et al.,
&Electrical characterization of AlGaN/GaN heterostructure wafers for high-power HFETs&
Journal of Crystal Growth, Vol. 230, 2001, pp. 579 - 583.
C. Fink, J. Schulze, I. Eisele, W. Hansch, W. Werner, W. Kanert,
&Reducing of ROn in vertical Power-MOSFETs due to local channel doping&
Japanese Journal of Applied Physics, 2001, Vol. 40, Issue 4B, pp. 2637.
K. Shenai,
&High-power robust semiconductor electronics technologies in the new millennium&
Microelectronics Journal, Vol. 32, Issues 5-6, 2001, pp. 397-408.
G. Kamoulakos, Th. Haniotakis, Y. Tsiatouhas, J. -P. Schoellkopf and A. Arapoyanni,
&Device simulation of a n-DMOS cell with trench isolation&
Microelectronics Journal, Vol. 32, Issue 1, January 2001, pp. 75-80.
C. Anghel, N. Hefyene, A. Ionescu, M. Vermandel, B. Bakeroot, J.Doutreloigne, R. Gillon, S. Frere, C. Maier, Y. Mourier,
&Investigations and Physical Modelling of Saturation Effects in Lateral DMOS Transistor Architectures Based on the Concept of Intrinsic Drain Voltage&
ESSDERC 2001. pp. 399-402.
Kim S. L. Jeon C. K. Kim J. J. Choi Y. S. Kim M. H. Kang H. S. Song C. S.,
&A New Compact Isolation Structure in High Side Island Region of 600V HVIC,&
Proc. ESSDERC 2001, pp. 415-418.
Frere S.F. Rhayem J. Adawe H.O. Gillon R. Tack M. Walton A.J.,
&LDMOS Capacitance Analysis versus Gate and Drain Biases, Based on Comparison Between TCAD Simulations and Measurements,&
Proc. ESSDERC 2001, pp. 219-222.
Tsai-Sheng Liao, P. Yu, and O. Zucker,
&Analysis of high pulse power generation using novel excitation of IGBT,&
Proceedings of the IEEE 6th International Conference on Solid-State and Integrated-Circuit Technology, Vol. 1. pp. 143-148.
Q. Zhang and T. S. Sudarshan
&Lateral current spreading in SiC schottky diodes using metal overlap edge termination,&
Solid-State Electronics, Vol. 45, 2001, pp. .
C. K. Jeon, J. J. Kim, Y. S. Choi, M. H. Kim, S. L. Kim, H. S. Kang, C. S. Song,
&800V/1A, 1-chip process for battery charger IC,&
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2001, pp. 355-358.
Marc C. Tarplee et al.,
&Design Rules for Field Plate Edge Termination in SiC Schottky Diodes,&
IEEE Trans. Elect. Dev., Vol. 48, No. 12, Dec. 2001, pp. .
Q. Zhang and T. S. Sudarshan,
&Lateral current spreading in SiC Schottky diodes using metal overlap edge termination&
Solid-State Electronics, Vol. 45, Issue 10, October 2001, pp. .
N. L. Rupesinghe, M. Chhowalla, K. B. K. Teo, G. A. J. Amaratunga
&Field emission vacuum power switch using vertically aligned carbon nanotubes&
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2001, Vol. 21, pp. 3-4.
D. Dragomirescu, G. Charitat,
&Improving the dynamic avalanche breakdown of high voltage planar devices using semi-resistive field plates&
Microelectronics Journal, Vol. 32, May-June 2001, pp. 473-479.
P. D. Hewitt and G. T. Reed,
&Improved modulation performance of a silicon p-i-n device by trench isolation&
Journal of Lightwave Technology, Vol. 19, Issue 3, March 2001, pp. 387-390.
C. J. Hung, P. Roblin, and S. Akhtar,
&Distributed b-spline electrothermal models of thyristors proposed for circuit simulation of power electronics&
IEEE Transactions On Electron Devices, 48(2):353-366, February 2001.
B. You, A. Q. Huang, J. K. O. Sin,
&A 600-V, 10-A trench bipolar junction diode with superior static and dynamic characteristics&
IEEE Transactions on Electron Devices, Vol. 48, Issue 9, September 2001, pp. .
N. Cezac, F. Morancho, P. Rossel, H. Tranduc, A. Peyre-Lavigne
&New generation of power MOSFET based on the concept of `Floating Islands?&
EPJ Applied Physics, Vol. 10, Issue 3, June 2000, pp. 203-209.
K. Shenai, E. McShane, S. K. Leong, (sub T on fT title)
&Lateral RF SOI power MOSFETs with fT of 6.9 GHz&
IEEE Electron Device Letters, Vol. 21, Issue 10, October 2000, pp. 500-502.
K. Shenai and M. Trivedi,
&Silicon carbide power electronics for high temperature applications&
IEEE Aerospace Conference Proceedings, Vol. 5, 2000, pp. 431-437.
E. McShane and K. Shenai,
&Microwave performance of power MOSFETs on SOI substrates&
Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices, pp. 148-157.
S. Azzopardi, M. Trivedi, C. Zardini and K. Shenai,
&Non-destructive extraction of technological parameters for numerical simulation of conventional planar punch-through IGBT&
Solid-State Electronics, Vol. 44, Issue 11, 1 November 2000, pp. .
I. M. Gordion, Z. S. Gribnikov, V. A. Korobov and V. V. Mitin,
&Fast gate turn-off in a merged thyristor-like structure&
Solid-State Electronics, Vol. 44, Issue 10, 1 October 2000, pp. .
M. Trivedi and K. Shenai,
&Practical limits of high-voltage thyristors on wide band-gap materials&
Journal of Applied Physics, Vol. 88, Issue 12, 15 December 2000, pp. .
K. Sheng, F. Udrea and G. A. J. Amaratunga,
&Optimum carrier distribution of the IGBT&
Solid-State Electronics, Vol. 44, Issue 9, 1 September 2000, pp. .
J. Vobecky, P. Hazdra, O. Humbel and N. Galster,
&Crossing point current of electron and proton irradiated power P-i-N diodes&
Microelectronics Reliability, Vol. 40, Issue 3, 17 March 2000, pp. 427-433.
M. Hossin, C. M. Johnson, N. G. Wright and A. G. O?Neill,
&Evaluation of GaAs Schottky gate bipolar transistor (SGBT) by electrothermal simulation&
Solid-State Electronics, Vol. 44, Issue 1, January 2000, pp. 85-94.
P. D. Hewitt and G. T. Reed,
&Improving the response of optical phase modulators in SOI by computer simulation&
Journal of Lightwave Technology, Vol. 18, Issue 3, March 2000, pp. 443-450.
F. Z. Mezroua and R. Abid,
&Two-dimensional simulation of the transient electrothermal effects during the gate turn-off thyristor turn-off&
Journal of Vac. Sci. Technol. A, Vol. 18, Issue 2, 2000, pp. 787 - 792.
Changli Zhang, J. Waldmeyer, P. Roggwiller, Zhiming Chen, and Yapeng Lu,
&Soft recovery characteristics of punch-through power diodes by proton irradiation&
Proceedings of the 3rd IEEE International Symposium on Power Electronics and Motion Control, 2000, Vol. 1. pp. 229-234.
P. B. Shah, K. A. Jones, A. K. Agarwal, and S. Seshadri,
&In-depth analysis of SiC GTO thyristor performance using numerical simulations&
Solid-State Electronics, Vol. 44, 2000, pp. 353-358.
A. Vandooren, S. Cristoloveanu, and J. P. Colinge,
&The dynamic conductance and transconductance in double-gate (gate-all-round) SOI devices&
Proceeding of IEEE International SOI Conference, 2000, pp. 116-117.
Vermandel L. Doutreloigne J. Moens P Tack M.,
&Using the Self Aligned Field Implant To Design High Voltage Devices in Sub-um CMOS Technologies&
Proc. ESSDERC 2000, pp. 228-231.
N. Cezac et al.,
&A new generation of power unipolar devices: the concept of the floating islands MOS transistor (FLIMOST)&
ISPSD?2000, Toulouse, pp. 69-72.
C. Finkl et al.,
&Vertical Power-MOSFETs with Local Channel Doping&
Proc. IEDM 2000, pp. 71-74.
Vickram R. Vathulya and Marvin H. White,
&Characterization and performance comparison of the power DIMOS structure fabricated with a reduced thermal budget in 4H and 6H-SiC&
Solid-State Electronics, Vol. 44, Issue 2, 2000, pp. 309-315.
B. H. Stark and P. P. Palmer,
&Switching aspects of hybrid semiconductor power devices&
IEE Colloquium (Digest), Issue 30, 1999.
N. S. Saks, S. S. Mani, A. K. Agarwal, M. G. Ancona,
&475-V high-voltage 6H-SiC lateral MOSFET&
IEEE Electron Device Letters, Vol. 20, Issue 8, August 1999, pp. 431-433.
B. H. Stark and P. R. Palmer,
&Single-gated multiple-mode power semiconductor devices&
IEE Colloquium (Digest), Issue 104, 29 June 1999, pp. 21-24.
N. Ota, et al.,
&Thick and large area PIN diodes for hard X-ray astronomy&
Nuclear Instruments and Methods in Physics Research A, Vol. 436, October 1999, pp. 291-296.
Budong You, Alex Q. Huang and Johnny K. O. Sin,
&Analysis of high-voltage trench bipolar junction diode (TBJD)&
Solid-State Electronics, Vol. 43, Issue 9, September 1999, pp. .
V. R. Vathulya, H. L. Shang and M. H. White,
&A novel 6H-SiC power DMOSFET with implanted P-well spacer&
IEEE Electron Device Letter, Vol. 20, Issue 7, Jul. 1999, pp. 354-356.
Vobeck& J., Hazdra P., Z&hlava, V.,
&Open circuit voltage decay lifetime of ion irradiated devices&
Microelectronics Journal, Vol. 30, Issue 6, June 1999, pp. 513-520.
Z. S. Gribnikov, A. B. Brailovsky and V. V. Mitin,
&Stacked PIN diode structures for microwave switching&
Solid-State Electronics, Vol. 43, Issue 5, May 1999, pp. 997-1000.
P. R. Palmer and B. H. Stark,
&Formalised method for effecting multiple modes in single MOS gated power devices&
IEE Proceedings on Circuits, Devices and Systems, Vol. 146, Issue 4, 1999, pp. 203-209.
Yang-Kyu Choi, K. Asano, N. Lindert, V. Subramanian, Tsu-Jae King, J. Bokor, and Chenming Hu,
&Ultra-thin body SOI MOSFET for deep-sub-tenth micron era&
IEEE International Electron Devices Meeting, IEDM Technical Digest, Vol. 21, Issue 5, 1999, pp. 254-255.
H. T. Lim, F. Udrea, D. M. Garner, and W. I. Milne,
&Modelling of self-heating effect in thin SOI and partial SOI LDMOS power devices&
Solid-State Electronics, Vol. 43, Issue 7, 1999, pp. .
P. Hower et al.,
&Safe Operating Area Considerations in LDMOS transistors&
Proc. ISPSD?99, pp. 55-58.
Malay Trivedi and Krishna Shenai,
&Physical Analysis Of Current Snap-Back Phenomenon In Buffered High Power Rectifiers&
Proc. IEEE BCTM 1999.
K. Palser et al.,
&3D numerical simulation for assisting external latch-up protection test structure design&
ESSDERC 1999, Vol. 1, pp. 508-511.
Budong You et al.,
&A New Trench Bipolar Junction Diode (TBJD)&
Proc. ISPSD 1999, pp. 133-136.
J. L.Sanchez et al.,
&A new high-voltage integrated switch : the &&Thyristor Bual&& function&
ISPSD 1999, pp. 157-160.
Malay Trivedi and Krishna Shenai,
&Comparison of RF Performance of Vertical and Lateral DMOSFET&
ISPSD 1999, pp. 245-248.
V. Raineri, M. Saggio, F. Frisina and E. Rimini,
&Voids in silicon power devices&
Solid-State Electronics, Vol. 42, December 1998, pp. .
Pankaj B. Shah and Kenneth A. Jones,
&Two dimensional numerical investigation of the impact of material parameter uncertainty on the steady-state performance of passivated 4H-SiC thyristors&
Journal of Applied Physics, Vol. 84, No. 8, October 1998, pp. .
M. Trivedi, A. Mulay, R. Vijayalakshmi, and K. Shenai,
Department of Electrical Engineering & Computer Science, 1135 SED
University of Illinois at Chicago, Chicago, IL 60607
E. McShane, Y. Xu, P. Khandelwal, and K. Shenai,
Department of Electrical Engineering & Computer Science, 1135 SED
University of Illinois at Chicago,, Chicago, IL 60607
Eric Vandenbossche, Catherine De Keukeleire, Marc de Wolf, Hugo Van Hove and Johan Witters,
&Modelling and simulation of hot-carriers degradation of high voltage floating lateral NDMOS transistors&
Microelectronics and Reliability, Vol. 38, Issues 6-8, 8 June 1998, pp. .
Miribel-Catala P. L., Puig-Vidal M., Bota S., Montane E.,
&Metodologias de diseno fisico aplicadas al diseno de circuitos integrados de potencia (Physical design methodologies applied to the design of integrated power circuits)&
Informacion Tecnologica, Vol. 9, Issue 2, 1998, pp. 319-322 (In Spanish).
P. R. Walsh, A. F. J.Murray and W. A. Lane,
&A Family of Novel Surge Protection Devices With Improved Parameter Control&
Proceedings of 1998 ISPSD, pp. 301-305.
M. Nemoto, Y. Takahashi, T. Fujii, N. Iwamuro and Y. Seki,
&Study on Voltage Oscillation Phenomenon in High power P-i-N Diode&
Proceedings of 1998 ISPSD, pp. 305-308.
M. T. Rahimo, D. E.Crees, N. Y. Shammas,
&A Novel Concept for Fast Recovery Diodes having Junction Charge Extraction(JCE) Regions&
Proceedings of 1998 ISPSD, pp. 309-312.
M. Kataoka, K. Komuro, K. Fujita, M. Hayama, A. Taniguchi,
&Analysis of Al-shorted WSix/Si Gate Performance in High-Frequency Band Si Power MOSFETs with Process/Device/Circuit Continous Simulation&
Proceedings of 1998 ISPSD, pp. 333-336.
J. Wang and B. W. Williams,
&A simulation study of high voltage 4H-SiC IGBTs&
Semiconductor Science and Technology, Vol. 13, N. 7, 1998, pp. 806-815.
Francesco G. Della Cortea, Fortunato Pezzimentia, Roberta Nipotib,
aDIMET—Faculty of Engineering, Mediterranea University of Reggio Calabria, Via Graziella
J. Vobecky and P. Hazdra,
Czech Technical University in Prague, Department of Microelectronics, Czech Republic
M. Vermandel, C. De Backere and A. Van Calster,
&A high voltage nDMOS structure in a standard sub-micron CMOS process&
Proc. ESSDERC 1997, pp. 508-511.
C. M. Johnson, M. Hossin and A. G. O?Neill
&GaAs schottky gate bipolar transistor for high voltage power switching applications&
Proc. ESSDERC?97, pp. 548-551.
B. You, A. Q. Huang, B. Zhang, Y. Li
&The Bipolar Junction Diode (BJD) - A new power diode concept&
International Power Electronics Congress - CIEP, Vol. , pp. 164-169.
S. Azzopardi, J-M. Vinassa and C. Zardini,
&Investigations on the internal physical behaviour of 600V punch-through IGBT under latch-up at high temperature&
Proc. ESSDERC 1997, pp. 616-619.
C. Mingues and G .Charitat,
&Efficiency of junction termination techniques vs oxide trapped charges&
Proc. IEEE ISPSD 1997, pp.137-140.
S. Xu et al.,
&BiLBRT: Bidirectional lateral base resistance controlled thyristor&
Proc. IEEE ISPSD 1997, pp. 281-284.
&M. Trivedi, S. Pendharkar, K. Shenai,
&Switching characteristics of MCT?s and IGBT?s in power converters&
IEEE Transactions on Electron Devices, Vol. 43, Issue 11, November 1996, pp. .
M. Allenspach, C. Dachs, G. H. Johnson and et al.,
&SEGR and SEB in N-channel power MOSFETs&
IEEE Trans. Nuclear Science, Vol. 43, Issue 6, Dec. 1996, pp. .
D. Uffmann, J. Ackermann, J. Stemmer, J. Aderhold, and H.-U. Schr&der
Laboratorium f&r Informationstechnologie, Universit&t Hannover
Schneiderberg 32, D-30167 Hannover, Germany
J. L. Titus, C. F. Wheatley, M. Allenspach and et al.,
&Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs&
IEEE Trans. Nuclear Science, Vol. 43, Issue 6, Dec. 1996, pp. .
Ralph (Sam) Smith III, Raytheon Electronic Systems
M. Trivedi and K. Shenai,
&Internal dynamics of IGBT during short circuit switching&
Proc. IEEE BCTM 1996, pp. 77-80.
D. Moncoqut et al.,
&LDMOS Transistor for SMART POWER circuits: Modelling and design&
Proc. IEEE BCTM 1996, pp. 216-219.
A. Nezar et al.,
&Hot-electron induced snapback in 50-V LDMOS transistors fabricated in 0.8 um CMOS technology&
Proc. IEEE BCTM?96, pp. 224-226.
Francis K. Chai, S. L. Kosier, R. D. Schrimpf and K. F. Galloway,
&A method for predicting breakdown voltage of power devices with cylindrical diffused junctions&
Solid-State Electronics, Vol. 38, Issue 8, August 1995, pp. .
Widjaja, Kurnia, Shenai, Divan,
&Switching Dyamics of IGBT?s in Soft-Switching Converters&
IEEE Trans. on ED, Vol 42, Issue 3, March 1995, pp. 445-454.
Fischer K. J., Shenai K.,
&Effect of Bipolar Turn-On on the Static Current-Voltage Characteristics of Scaled Vertical Power DMOSFET?s&
IEEE Trans. on ED, Vol 42, Issue 3, March 1995,
pp. 555-563.
S. L. Kosier et al.,
&Comparison of termination methods for low-voltage, vertical integrated power devices&
Solid States Electronics, Vol. 37, No 9, pp. 94.
Widjaja, Kurnia, Divan, Shenal,
&Computer Simulation and Design Optimization of IGBT?s in Soft-Switching Converters (note: references Silvaco?s MIXEDMODE)&
ISPSD, 1994.
A. F. J. Murray and W. A. Lane,
&800V wiring for HVIC applications using polysilicon field plates&
Proc. ESSDERC?94, pp. 213-216.
Y. Apanovich, R. Cottle, E. Lyumkis, B. Polsky, A. Shur, A. Tcherniaev, and P. Blakey,
&Breakdown Simulation of Semiconductor Devices Including Energy Balance and Lattice Heating&
Workshop on Computational Elect, 1994.
Li, Crandle, Temkin, Hopper,
&A Two-Dimensional Model for Silicide Growth&
VPAD, 1993.
Park, M. Law,
&A Point Defect Based 2D Model of Dislocation Loops & Their Effects on OED of Boron in Silicon&
TECHCON, 1993.
Hellstrom, Freydin, Velmre, Udal,
&Two-Dimensional Modeling of Self-Heating Processes in Semiconductor Structures&
ESD Symposium, 1993.
Parks, M. E. Law,
&A Two-Dimensional Model of Dislocation Loops in Silicon&
Process Physics Symp Hawaii, 1993.
Meng, Chen, Robinson, Law, Slinkman, Jones,
&Using Oxidation to Study the Reaction Between Point Defects & Dislocation Loops&
Process Physics Symp Hawaii, 1993.
&SUPREM-IV Seminar 1993&
Y. Apanovich, R. Cottle, B. Freydin, E. Lyumkis, B. Polsky, A.,
and P. Blakey,
&Numerical Modeling of Electrothermal Effects in Semiconductor Devices&
SISDEP, 1993.
Y. Apanovich, R. Cottle, B. Freydin, E. Lyumkis, B. Polsky, A. Tchernaiev, and P. Blakey,
&The influence of lattice heating on semiconductor device characteristics&
COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering 1993 Vol. 12 Issue: 4 pp. 531 - 539.
&A Quantitative Model for the Coupled Diffusion of Phosphorus & Pint Defects in Silicon&
J. Electrochem Soc. Vol 139. Issue. 9, pp. , Sept 1992.
Freydin, Velmere, Udal,
&Failure Prediction of Power Devices Under Reverse Surge Current Conditions&
ISPSD, 1992.
Freydin, Velmere, Udal,
&Electrothermal Simulation of Power Semiconductor Devices&
VPAD, 1991.
Rabkin, Shabanov,
&Modeling the Switching-Off Process in Latching p-n-p-n Structures Using A Quasi-Two-Dimensional Approximation&
Radiotekhnika, 1989.
Rabkin, Korsmik,
&Investigation of the Influence of the Parameters of the p-Bases on the Static Characteristics of a Latching Thyristor&
Radiotekhnika, 1989.
&Mathematical Model & Investigation of the Turn-off Process of p-n-p-n Structures in Combination Regime&
Radiotekhnika, 1989.}
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